| PART |
Description |
Maker |
| SI2324DS-T1-GE3 |
Trans MOSFET N-CH 100V 1.6A T/R
|
Vishay Siliconix
|
| IRFU9120 |
Trans MOSFET P-CH 100V 5.6A 3-Pin(2 Tab) TO-251
|
Vishay Siliconix
|
| FDA69N25 |
N-Channel UniFETTM MOSFET 250V, 69A, 41m
|
Fairchild Semiconductor
|
| MJE254 |
Trans GP BJT PNP 100V 4A 3-Pin TO-126
|
New Jersey Semiconductors
|
| 2N5435 |
Trans GP BJT NPN 100V 7A 3-Pin(2 Tab) TO-66 Sleeve
|
New Jersey Semiconductors
|
| BDY83 |
Trans GP BJT NPN 100V 10A 3-Pin(2 Tab) TO-3
|
New Jersey Semiconductor
|
| BDT91 |
Trans GP BJT NPN 100V 15A 3-Pin(3 Tab) TO-220
|
New Jersey Semiconductor
|
| IRF9140 |
-100V,Thru-Hole Radiation Hardened Power MOSFET(-100V,???瀹?????灏????娌??MOSFET)
|
International Rectifier
|
| IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN41 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统（SMD - 1
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFD110 |
Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.54ohm，身份证\u003d 1.0安培
Power MOSFET(Vdss=100V/ Rds(on)=0.54ohm/ Id=1.0A)
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| V53C104P-70 V53C104P-70L V53C104P-12 V53C104P-12L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
TRANS NPN DARL 100V 8A TO022FP
|
Mosel Vitelic, Corp.
|
